Localized damage in AlGaN/GaN HEMTs induced by reverse-bias testing

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 427-429

  Zanoni, Enrico ^a   Danesin, Francesca ^a   Meneghini, Matteo ^a   Cetronio, Antonio ^b   Lanzieri, Claudio ^b   Peroni, Marco ^b   Meneghesso, Gaudenzio ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b SELEX SISTEMI INTEGRATI   (Italy)

Author keywords

Current collapse; Electroluminescence (EL); Failure mechanism; GaN; High electron mobility transistor (HEMT); Reverse bias

Indexed keywords

CURRENT COLLAPSE; FAILURE MECHANISM; GAN; HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT); REVERSE-BIAS;

DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE (FLUID); LIGHT EMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SULFUR COMPOUNDS; TRANSISTORS;

ELECTROLUMINESCENCE;

EID: 67349100501     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2016440     Document Type: Article

References (11)

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