Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT

Microelectronics Journal

Volumn 36, Issue 8, 2005, Pages 705-711

  Mastro, M A ^a   LaRoche, J R ^b   Bassim, N D ^a   Eddy Jr , C R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

GaN Strain; High electron mobility transistors; Passivation layer; PECVD

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRON TRAPS; GALLIUM NITRIDE; MICROWAVE DEVICES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; STRAIN;

GAN STRAIN; GATE LAG EFFECT; HIGH FREQUENCY ELECTRONIC COMPONENTS; PASSIVATION LAYERS; PECVD;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 23744495048     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.02.121     Document Type: Article

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