SCOPUS 정보 검색 플랫폼

Volumn 100, Issue 3, 2012, Pages

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

(7) Meneghini, Matteo a Stocco, Antonio a Bertin, Marco a Marcon, Denis b Chini, Alessandro c Meneghesso, Gaudenzio a Zanoni, Enrico a

a UNIVERSITY OF PADOVA (Italy)

b IMEC (Belgium)

c UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN LAYERS; ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CRITICAL VOLTAGES; DEFECT CONCENTRATIONS; DEGRADATION KINETICS; GATE CURRENT; GATE LEAKAGES; NEGATIVE CHARGE; PARASITIC LEAKAGES; PERCOLATION PROCESS; POSITIVE CHARGES; REVERSE-BIAS; STEP-STRESS; STRESS TIME; TIME-DEPENDENT;

BIAS VOLTAGE; DEFECTS; DEGRADATION; ELECTRON MOBILITY; GALLIUM NITRIDE; SOLVENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84856501008 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3678041 Document Type: Article

Times cited : (116)

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