Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1222-1225

  Piazza, Michele ^a,b   Dua, Christian ^a   Oualli, Mourad ^a   Morvan, Erwan ^a   Carisetti, Dominique ^c   Wyczisk, Frédéric ^c  

^a A T 3 5Lab ^*  (France)

^b Centre National de la Recherche Scientifique   (France)

^c THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; CROSS SECTION; EDS ANALYSIS; GAN HEMTS; INTER-DIFFUSION; LONG TERM; OUT-DIFFUSION; PASSIVATION FILM; ROOT CAUSE; THERMAL STORAGE; TI/AL/NI/AU;

ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HEAT STORAGE; HIGH ELECTRON MOBILITY TRANSISTORS; OHMIC CONTACTS; PASSIVATION; SEMICONDUCTING GALLIUM;

DEGRADATION;

EID: 69249247830     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.06.043     Document Type: Article

References (3)

1. Singhal S et al. GaN-on-Si failure mechanisms and reliability improvements. In: IEEE 06CH37728 44 IRPS, San José; 2006. p. 95-8.
2. Gillepsie J., Crespo A., Fitch R., Jessen G., and Via G. AlGaN/GaN ohmic contact resistance variations across epitaxial suppliers. Solid State Electron 49 (2005) 670-672
3. Boudart B, Trassaert S, Wallart X, Pesant JC, et al. Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN. J Electron Mater, 2000 (May).