Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 1 SPEC, 2003, Pages 81-86

  Dammann, M ^a   Leuther, A ^a   Benkhelifa, F ^a   Feltgen, T ^a   Jantz, W ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

HOT ELECTRONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037278351     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306303     Document Type: Conference Paper

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