The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

  Rivera, C ^a   Munoz E ^a  

^a Polytechnic University of Madrid   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSISTORS;

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; BIAXIAL TENSILE; CONVERSE PIEZOELECTRIC EFFECTS; DEGRADATION MECHANISMS; EFFECT OF STRAINS; ELASTIC ENERGIES; ELECTRIC-ENTHALPY FUNCTIONAL; ELECTROSTATIC ENERGIES; FIELD-INDUCED STRAINS; GATE VOLTAGES; NEGATIVE GATE VOLTAGES; THEORETICAL CALCULATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 59849105160     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077190     Document Type: Article

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