Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

Microelectronics Reliability

Volumn 52, Issue 1, 2012, Pages 23-28

  Douglas, E A ^a   Chang, C Y ^a   Gila, B P ^a   Holzworth, M R ^a   Jones, K S ^a   Liu, L ^a   Kim, Jinhyung ^b   Jang, Soohwan ^b   Via, G D ^c   Ren, F ^a   Pearton, S J ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b Dankook University   (South Korea)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CRITICAL VOLTAGES; CROSS-SECTIONAL TEM; DEVICE DEGRADATION; EFFECT OF TEMPERATURE; ELEVATED TEMPERATURE; GATE-LEAKAGE CURRENT; INTERFACIAL LAYER; NEGATIVE TEMPERATURES; REVERSE GATE; STRESS TEMPERATURE;

BIAS VOLTAGE; DEGRADATION; ELECTRON MOBILITY; GALLIUM NITRIDE; LASERS; LEAKAGE CURRENTS; TEMPERATURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84155170928     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.09.018     Document Type: Conference Paper

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