On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

Applied Physics Letters

Volumn 101, Issue 3, 2012, Pages

  Montes Bajo, M ^a   Hodges, C ^a   Uren, M J ^a   Kuball, M ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AFM IMAGING; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; COMBINED EFFECT; GATE CURRENT; GATE-LEAKAGE CURRENT; HOT SPOT; LEAKAGE PATHS; OFF-STATE STRESS; REVERSE BIAS; SEMI-CONDUCTOR SURFACES; SURFACE PITS;

ATOMIC FORCE MICROSCOPY; DEGRADATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS;

ELECTROLUMINESCENCE;

EID: 84864207477     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737904     Document Type: Article

References (14)

1. U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, Proc. IEEE 96, 287 (2008). 10.1109/JPROC.2007.911060
2. R. J. Trew, D. S. Green, and J. B. Shealy, IEEE Microwave Mag. 10, 116 (2009). 10.1109/MMM.2009.932286
3. E. Zanoni, F. Danesin, M. Meneghini, A. Cetronio, C. Lanzieri, M. Peroni, and G. Meneghesso, IEEE Electron Device Lett. 30, 427 (2009). 10.1109/LED.2009.2016440
4. D. Marcon, T. Kauerauf, F. Medjdoub, J. Das, M. Van Hove, P. Srivastava, K. Cheng, M. Leys, R. Mertens, S. Decoutere, G. Meneghesso, E. Zanoni, and G. Borghs, in IEEE International Electron Devices Meeting (IEDM) (IEEE, 2010), pp. 20.3.1-20.3.4.
5. M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini, G. Meneghesso, and E. Zanoni, Appl. Phys Lett. 100, 033505 (2012). 10.1063/1.3678041
6. P. Makaram, J. Joh, J. A. Del Álamo, T. Palacios, and C. V. Thompson, Appl. Phys. Lett. 96, 233509 (2010). 10.1063/1.3446869
7. J. Joh, J. A. del Álamo, K. Langworthy, S. Xie, and T. Zheleva, Microelectron. Reliab. 51, 201 (2011). 10.1016/j.microrel.2010.08.021
8. M. Meneghini, A. Stocco, M. Bertin, N. Ronchi, A. Chini, D. Marcon, G. Meneghesso, and E. Zanoni, in IEEE International Electron Devices Meeting (IEDM) (IEEE, 2011), pp. 19.5.1-19.5.4.
9. F. Gao, B. Lu, L. Li, S. Kaun, J. S. Speck, C. V. Thompson, and T. Palacios, Appl. Phys. Lett. 99, 223506 (2011). 10.1063/1.3665065
10. C. Hodges, N. Killat, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, D. Wolverson, and M. Kuball, Appl. Phys. Lett. 100, 112106 (2012). 10.1063/1.3693427
11. M. Baeumler, F. Gütle, V. Polyakov, M. Cäsar, M. Dammann, H. Konstanzer, W. Pletschen, W. Bronner, R. Quay, P. Waltereit, M. Mikulla, O. Ambacher, F. Bouergeois, R. Behtash, K. J. Riepe, P. J. van der Wel, J. Klappe, and T. Rödle, J. Electron. Mater. 39, 756 (2010). 10.1007/s11664-010-1120-9
12. U. Chowdhury, J. L. Jiménez, C. Lee, E. Beam, P. Saunier, T. Balistreri, S.-Y. Park, T. Lee, J. Wang, M. J. Kim, J. Joh, and J. A. del Álamo, IEEE Electron Device Lett. 29, 1098 (2008). 10.1109/LED.2008. 2003073
13. M. apajna, U. K. Mishra, and M. Kuball, Appl. Phys. Lett. 97, 023503 (2010). 10.1063/1.3460529
14. M. apajna, S.W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, and M. Kuball, Appl. Phys. Lett. 99, 223501 (2011). 10.1063/1.3663573