AlGaN/GaN high electron mobility transistor structures: Self-heating effect and performance degradation

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 3, 2008, Pages 543-548

  Vitusevich, Svetlana A ^a   Kurakin, Andrey M ^a   Klein, Norbert ^a   Petrychuk, Mykhailo V ^b   Naumov, Andrey V ^c   Belyaev, Alexander E ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^c INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

Heating; High electron mobility transistors (HEMTs); Noise measurement; Reliability; Spectroscopy

Indexed keywords

ACTIVATION ENERGY; BICMOS TECHNOLOGY; CORUNDUM; CRYSTALS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; GAMMA RAYS; HEATING; IONIZING RADIATION; PHOTODEGRADATION; SAPPHIRE; SEMICONDUCTING GALLIUM; SILICON CARBIDE; SUBSTRATES;

ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BUFFER THICKNESSES; HETEROSTRUCTURES; HIGH-ELECTRON MOBILITY TRANSISTORS (HEMTS); IRREVERSIBLE; NOISE MEASUREMENT; NOISE SPECTROSCOPIES; NUMERICAL INVESTIGATIONS; PERFORMANCE DEGRADATIONS; QUANTUM SCATTERINGS; SELF-HEATING; SIC SUBSTRATES; TEMPERATURE INCREASES; TOTAL DOSES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 54949104398     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2008.2001684     Document Type: Article

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