Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Jung, Helmut ^a   Behtash, Reza ^a   Thorpe, James R ^a   Riepe, Klaus ^a   Bourgeois, Franck ^a   Blanck, Hervé ^a   Chuvilin, Andrey ^b   Kaiser, Ute ^b  

^a United Monolithic Semiconductors GmbH   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGING BEHAVIOR; AGING PROBLEM; CURRENT INCREASE; GAN HEMTS; HIGH POWER PERFORMANCE; KEY ELEMENTS; LONG TERM; POWER DEVICES; RELIABILITY BEHAVIOR; SCHOTTKY; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SIDE WALLS; TEM;

DIFFUSION BARRIERS; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77952734555     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880819     Document Type: Article

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