Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing

Journal of Applied Physics

Volumn 82, Issue 11, 1997, Pages 5547-5554

  Meneghesso, Gaudenzio ^a   Mion, Alvise ^a   Haddab, Youcef ^b   Pavesi, Maura ^c   Manfredi, Manfredo ^c   Canali, Claudio ^d   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b EPFL   (Switzerland)

^c UNIVERSITY OF PARMA   (Italy)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037790527     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366413     Document Type: Article

References (38)

1. H. Morkner, M. Frank, and D. Miller, IEEE 1993 Microwave Millimeter-Wave Monolithic Circuits Symp. Dig. 13 (1993).
2. K. H. G. Duh, S. M. J. Liu, S. C. Wang, P. Ho, and P. C. Chao, IEEE 1993 Microwave Millimeter-Wave Monolithic Circuits Symp. Dig. 99 (1993).
3. R. E. Kasody, G. S. Dow, A. K. Sharma, M. V. Aust, D. Yamaguchi, R. L. Lai, M. Biedenbender, K. L. Tan, and B. R. Allen, IEEE Microwave Guid. Wave Lett. 4, 303 (1994).
4. C. Canali, P. Cova, E. D. Bortoli, F. Fantini, G. Meneghesso, R. Menozzi, and E. Zanoni, Proceedings of International Reliability Physics Symposium, Las Vegas, Nevada, April 3-6, 1995, p. 205.
5. E. Zanoni, A. Neviani, G. Meneghesso, E. D. Bortoli, L. Vendrame, and A. Rizzato, Proceedings of 5th European Symposium on Reliability and Failure Analysis, Glasgow, Scotland, October 4-7, 1994, p. 261.
6. G. Meneghesso, C. Canali, P. Cova, E. D. Bortoli, and E. Zanoni, IEEE Electron Device Lett. 17, 232 (1996).
7. R. Menozzi, P. Cova, C. Canali, and F. Fantini, IEEE Trans. Electron Devices 43, 543 (1996).
8. P. Audren, J. Dumas, S. Mottet, C. Vuchener, J. Paugram, and M. Favennec, Quality Reliability Engineering International 8, 279 (1992).
9. N. L. Saunders, A. A. Rezazadeh, D. V. Morgan, H. Thomas, and L. G. Hipwood, Quality Reliability Engineering International 7, 331 (1991).
10. A. Christou, J. M. Hu, and W. T. Anderson, Proceedings of International Reliability Physics Symposium, Las Vegas, Nevada, April 9-11, 1991, p. 200.
11. Y. A. Tkachenko, C. J. Wei, J. C. M. Hwang, T. D. Harris, R. D. Grober, D. M. Hwang, L. Aucoin, and S. Shanfield, Proceedings of IEEE 1995 Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995, p. 115.
12. P. Chao, M. Kao, K. Nordheden, and A. Swanson, IEEE Electron Device Lett. 15, 151 (1994).
13. F. Aniel, P. Bouchard, A. Sylvestre, P. Crozat, F. H. Julien, R. Adde, and Y. Jin, J. Appl. Phys. 77, 2184 (1995).
14. C. Tedesco, E. Zanoni, C. Canali, S. Bigliardi, M. Manfredi, D. Streit, and W. Anderson, IEEE Trans. Electron Devices ED-40, 1211 (1993).
15. Y. Chou, G. P. Li, Y. C. Chen, R. Lai, and D. C. Streit, Proceedings of International Reliability Physics Symposium, Denver, Colorado, April 8-10, 1997, p. 261.
16. K. Hui, C. Hu, P. George, and P. Ko, IEEE Electron Device Lett. 11, 113 (1990).
17. C. Canali, A. Paccagnella, E. Zanoni, C. Lanzieri, and A. Cetronio, IEEE Electron Device Lett. 12, 80 (1991).
18. E. Zanoni, A. Paccagnella, P. Pisoni, P. Telaroli, C. Tedesco, C. Canali, N. Testa, and M. Manfredi, J. Appl. Phys. 70, 529 (1991).
19. C. Canali, A. Neviani, C. Tedesco, E. Zanoni, A. Cetronio, and C. Lanzieri, IEEE Trans. Electron Devices ED-40, 498 (1993).
20. C. Tedesco, M. Mastrapasqua, C. Canali, S. L. M. Manfredi, E. Zanoni, D. L. Sivco, and A. Y. Cho, IEEE Electron Device Lett. 15, 377 (1994).
21. N. Shigekawa, T. Enoki, T. Furuta, and H. Ito, IEEE Electron Device Lett. 16, 515 (1995).
22. N. Tsutsu, Y. Uraoka, Y. Nakata, and H. Esaki, IEEE Int. Conference Microelectronic Test Structures 3, 143 (1990).
23. P. Cova, R. Menozzi, F. Fantini, M. Pavesi, and G. Meneghesso, Microelectron. Reliab. 37, 1131 (1997).
24. E. Zanoni, M. Manfredi, S. Bigliardi, A. Paccagnella, P. Pisoni, C. Tedesco, and C. Canali, IEEE Trans. Electron Devices ED-39, 1849 (1992).
25. L. P. Sadwick, D. C. Streit, W. L. Jones, C. W. Kim, and R. J. Hwu, IEEE Trans. Electron Devices 39, 50 (1992).
26. F. Schuermeyer, Proceedings of Topical Workshop on Heterostructure Microelectronics, Sapporo, Japan, August 18-21, 1996, p. 46.
27. K. Lee, M. S. Shur, A. J. Valois, G. Y. Robinson, X. C. Zhu, and A. V. D. Ziel. IEEE Trans. Electron Devices ED-31, 1394 (1984).
28. Y. Hori and M. Kuzuhara, IEEE Trans. Electron Devices ED-41, 2262 (1994).
29. W. Kruppa and J. B. Boos, IEEE Trans. Electron Devices ED-42, 1717 (1995).
30. P. H. Ladbrooke and S. R. Blight, IEEE Trans. Electron Devices ED-35, 257 (1988).
31. A. Paccagnella, C. Tedesco, C. Canali, A. Cetronio, and C. Lanzier, Electron. Lett. 28, 2107 (1992).
32. C. Canali, F. Magistrali, A. Paccagnella, M. Sangalli, C. Tedesco, and E. Zanoni, IEE Proc.-G 138, 104 (1991).
33. F. J. Tegude and K. Heime, Electron. Lett. 16, 22 (1980).
34. J. Haruyama, H. Negishi, and Y. N. Y. Nashimoto, IEEE Trans. Electron Devices ED-44, 25 (1997).
35. C. Heedt, F. Buchali, W. Prost, D. Fritzsche, H. Nickel, and F. J. Tegude, Proceedings InP and Related Materials Conference, Paris, France, April 1994, p. 247.
36. S. Weiss and R. Kassing, Solid-State Electron. 31, 1733 (1988).
37. P. M. Mooney, R. Fisher, and H. Morkoç, J. Appl. Phys. 57, 1928 (1985).
38. L. Partain, D. Day, and R. Powell, J. Appl. Phys. 74, 335 (1993).