Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 6, 2012, Pages

  Johnson, Michael R ^a   Cullen, David A ^a,e   Liu, Lu ^b   Sheng Kang, Tsung ^b   Ren, Fan ^b   Chang, Chih Yang ^b   Pearton, Stephen J ^b   Jang, Soohwan ^c   Johnson, Wayne J ^d   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c Dankook University   (South Korea)

^d KOPIN CORPORATION   (United States)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; AMORPHOUS OXIDE LAYERS; BARRIER LAYERS; DEVICE FAILURES; ELECTRICAL PERFORMANCE; GATE CONTACT; GATE EDGE; GATE METALS; GATE-LEAKAGE CURRENT; METAL DIFFUSION; REPRESENTATIVE SAMPLE; STEP-STRESS TESTING; TESTED DEVICES; UNSTRESSED SAMPLES;

CRYSTAL DEFECTS; HIGH ELECTRON MOBILITY TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 84870345143     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4766303     Document Type: Article

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