Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Gao, Feng ^a,b   Lu, Bin ^a   Li, Libing ^b   Kaun, Stephen ^c   Speck, James S ^c   Thompson, Carl V ^b   Palacios, Tomás ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CURRENT COLLAPSE; DEGRADATION PROCESS; GATE EDGE; GATE ELECTRODES; IN-VACUUM; OFF-STATE STRESS; OXIDE PARTICLES; ROOM TEMPERATURE OXIDATION;

DEGRADATION; ELECTRIC FIELDS; ELECTRON MOBILITY; GALLIUM NITRIDE; OXIDATION; STRINGERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 82955213638     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3665065     Document Type: Article

References (22)

1. U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, Proc. IEEE 96, 287 (2008). 10.1109/JPROC.2007.911060
2. G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, IEEE Trans. Device Mater. Reliab. 8, 332 (2008). 10.1109/TDMR.2008.923743
3. J. A. del Alamo and J. Joh, Microelectron. Reliab. 49, 1200 (2009). 10.1016/j.microrel.2009.07.003
4. J. L. Jimenez and U. Chowdhury, IEEE Int. Reliab. Phys. Symp. Proc. 2008, 429.
5. M. Kuball, M. apajna, R. J. T. Simms, M. Faqir, and U. K. Mishra, Microelectron. Reliab. 51, 195 (2011). 10.1016/j.microrel.2010.08.014
6. J. Joh and J. A. del Alamo, IEEE Electron Device Lett. 29, 287 (2008). 10.1109/LED.2008.2000919
7. S. Y. Park, C. Floresca, U. Chowdhury, J. L. Jimenez, C. Lee, E. Beam, P. Saunier, T. Balistreri, and M. J. Kim, Microelectron. Reliab. 49, 478 (2009). 10.1016/j.microrel.2009.02.015
8. P. Makaram, J. Joh, J. A. del Alamo, T. Palacios, and C. V. Thompson, Appl. Phys. Lett. 96, 233509 (2010). 10.1063/1.3446869
9. E. Zanoni, F. Danesin, M. Meneghini, A. Cetronio, C. Lanziei, M. Peroni, and G. Meneghesso, IEEE Electron Device Lett. 30, 427 (2009). 10.1109/LED.2009.2016440
10. U. Chowdhury, J. L. Jimenez, C. Lee, E. Beam, P. Saunier, T. Balisteri, S-Y. Park, T. Lee, J. Wan, M. J. Kim, J. Joh, and J. A. del Alamo, IEEE Electron Device Lett. 29, 1098 (2008). 10.1109/LED.2008.2003073
11. J. Joh and J. A. del Alamo, Tech. Dig.-Int. Electron Devices Meet. 2006, 415.
12. A. Sarua, Hangfeng Ji, M. Kuball, M. J. Uren, T. Martin, K. J. Nash, K. P. Hilton, and R. S. Balmer, Appl. Phys. Lett. 88, 103502 (2006). 10.1063/1.2182011
13. J. Joh, L. Xia, and J. A. del Alamo, IEEE Int. Electron Devices Meet. 2007, 385.
14. M. Tajima, J. Kotani, and T. Hashizume, Jpn. J. Appl. Phys. 48, 020203 (2009). 10.1143/JJAP.48.020203
15. S. Singhal, J. C. Robers, P. Rajogopal, T. Li, A. W. Hanson, R. Therrien, J. W. Johnson, I. C. Kizilyalli, and K. J. Linthicum, IEEE Int. Reliab. Phys. Symp. Proc. 2006, 95.
16. M. Tapajna, N. Killat, U. Chowdhury, J. L. Jimenez, and M. Kuball, Reliability of Compound Semiconductors Workshop, Indian Wells, CA, May 16, 2011.
17. X. A. Cao, S. J. Pearton, G. Dang, A. P. Zhang, F. Ren, and J. M. Van Hove, Appl. Phys. Lett. 75, 4130 (1999). 10.1063/1.125559 (Pubitemid 129709779)
18. O. I. Saadat, J. W. Chung, E. L. Piner, and T. Palacios, IEEE Electron Device Lett. 30, 1254 (2009). 10.1109/LED.2009.2032938
19. D. Marcon, T. Kauerauf, F. Medjdoub, J. Das, M. Van Hove, P. Srivastava, K. Cheng, M. Leys, R. Mertens, S. Decoutere, G. Meneghesso, E. Zanoni, and G. Borghs, IEEE Int. Electron Devices Meet. 2010, 472.
20. J. Joh and J. A. del Alamo, IEEE Int. Reliab. Phys. Symp. Proc. 2011, 422.
21. C. G. Van de Walle and J. Neugebauer, J. Appl. Phys. 95, 3851 (2004). 10.1063/1.1682673
22. M. G. Ganchenkova and R. M. Nieminen, Phys. Rev. Lett. 96, 196402 (2006). 10.1103/PhysRevLett.96.196402 (Pubitemid 43727483)