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Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

(8) Tapajna, M a Kaun, S W b Wong, M H b Gao, F c Palacios, T c Mishra, U K b Speck, J S b Kuball, M a

a UNIVERSITY OF BRISTOL (United Kingdom)

b University of California (United States)

c Department of Electrical Engineering and Computer Science (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; GATE LEAKAGES; MAXIMUM DRAIN CURRENT; STRESS CONDITION; THREADING DISLOCATION DENSITIES; TRAP GENERATION; TRAPPING CHARACTERISTIC; VOLTAGE BIAS;

DEGRADATION; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 82955164094 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3663573 Document Type: Article

Times cited : (83)

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