Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Marko, P ^a   Alexewicz, A ^a   Hilt, O ^b   Meneghesso, G ^c   Zanoni, E ^c   Wrfl, J ^b   Strasser, G ^a   Pogany, D ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ELECTRON CAPTURE; ELECTRON EXCHANGE; GATE BIAS; GATE CURRENT; METAL GATE; PERCOLATION PATH; PULSEWIDTHS; RANDOM TELEGRAPH SIGNAL FLUCTUATIONS; RANDOM TELEGRAPH SIGNAL NOISE; RELATIVE AMPLITUDE; REVERSE GATE; STRESS-INDUCED;

GALLIUM NITRIDE; TELEGRAPH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84859792426     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3701164     Document Type: Article

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