High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2186-2188

  Arulkumaran, S ^a   Egawa, T ^a   Ishikawa, H ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; DC CHARACTERISTICS; FABRICATED DEVICE; HIGH TEMPERATURE; SEMI-INSULATING; SIC SUBSTRATES;

DRAIN CURRENT; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; SAPPHIRE; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79956006500     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1461420     Document Type: Article

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