Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors

IEEE Transactions on Device and Materials Reliability

Volumn 11, Issue 1, 2011, Pages 187-193

  Chang, Chih Yang ^a   Douglas, E A ^a   Kim, Jinhyung ^b   Lu, Liu ^a   Lo, Chien Fong ^a   Chu, Byung Hwan ^a   Cheney, D J ^a   Gila, B P ^a   Ren, F ^a   Via, G D ^c   Cullen, David A ^d   Zhou, Lin ^d   Smith, David J ^d   Jang, Soohwan ^b   Pearton, S J ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b Dankook University   (South Korea)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d ARIZONA STATE UNIVERSITY   (United States)

Author keywords

AlGaN; degradation; GaN; high electron mobility transistor (HEMT)

Indexed keywords

ALGAN; ALGAN/GAN; DC STRESS; DEGRADATION MECHANISM; DRAIN BIAS VOLTAGE; ELECTRIC FIELD STRENGTH; ELECTRICAL STRESS; GAN; GATE DRAIN; GATE LENGTH; HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT); SOFTWARE SIMULATION; SOURCE-DRAIN;

DC POWER TRANSMISSION; DEGRADATION; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; LINEAR ALGEBRA; TRANSMISSION ELECTRON MICROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79952820168     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2010.2103314     Document Type: Article

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