GaN HEMT reliability

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1200-1206

  del Alamo, J A ^a   Joh, J ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BARRIER LAYERS; CRITICAL VOLTAGES; DEGRADATION MECHANISM; ELECTRICAL RELIABILITY; ELECTRICAL STRESS; ELECTRICALLY ACTIVE DEFECTS; EXPERIMENTAL EVIDENCE; FAILURE MECHANISM; GAN HEMTS; GATE CURRENT; GATE EDGE; GATE-LEAKAGE CURRENT; HIGH VOLTAGE; INVERSE PIEZOELECTRIC EFFECTS; MECHANICAL STRESS; ORDERS OF MAGNITUDE; PARASITIC RESISTANCES;

DEFECTS; DEGRADATION; DRAIN CURRENT; ELECTRIC POTENTIAL; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MECHANISMS; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; STRESSES; SURFACE DEFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 69249220100     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.07.003     Document Type: Article

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