Review of profile and roughening simulation in microelectronics plasma etching

Journal of Physics D: Applied Physics

Volumn 42, Issue 19, 2009, Pages

  Guo, Wei ^a   Sawin, Herbert H ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR MONTE CARLO; DISCRETE CELLS; FEATURE SIZES; GATE LENGTH; INCIDENCE ANGLES; LEVEL SETS; METHOD OF CHARACTERISTICS; MICROELECTRONICS MANUFACTURING; MONTE CARLO CALCULATION; MOVING INTERFACE; ORDER OF MAGNITUDE; PATTERN TRANSFERS; PLANAR SURFACE; PROFILE EVOLUTION; RIPPLE FORMATION; SIDEWALL ROUGHNESS; SOLUTION ALGORITHMS; STRING ALGORITHMS; SURFACE KINETICS; SURFACE PROFILES; SURFACE-ROUGHENING; THREE-DIMENSIONAL (3D) MODEL; UNDERLYING LAYERS; VELOCITY FIELD;

ION BOMBARDMENT; MICROELECTRONIC PROCESSING; MICROELECTRONICS; MONTE CARLO METHODS; PLASMA ETCHING; SIMULATORS; THREE DIMENSIONAL COMPUTER GRAPHICS; TWO DIMENSIONAL;

THREE DIMENSIONAL;

EID: 70350635386     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/19/194014     Document Type: Review

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