An atomic scale model of multilayer surface reactions and the feature profile evolution during plasma etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 12, 2005, Pages 8650-8660

  Osano, Yugo ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Chlorine chemistries; Feature profile evolution; Ion enhanced etching; Monte Carlo simulation; Plasma etching; Silicon etching; Stopping and range of ions in substrates; Surface reaction layer

Indexed keywords

CHLORINATION; CHLORINE; COMPUTER SIMULATION; CRYSTAL LATTICES; ELECTRON TRANSITIONS; IONS; MATHEMATICAL MODELS; MICROSTRUCTURE; MONTE CARLO METHODS; PLASMA ETCHING; SILICON; SURFACE ROUGHNESS; TRAJECTORIES; TRENCHING;

CHLORINE CHEMISTRIES; FEATURE PROFILE EVOLUTION; ION-ENHANCED ETCHING; SILICON ETCHING; STOPPING AND RANGE OF IONS IN SUBSTRATES; SURFACE REACTION LAYER;

SURFACE REACTIONS;

EID: 31544455246     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.8650     Document Type: Article

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