3-D topography simulator (3-D MULSS) based on a physical description of material topography

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 226-238

  Fujinaga, Masato ^a   Kotani, Norihiko ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; ATOMS; DEPOSITION; ETCHING; FABRICATION; MASS TRANSFER; MOLECULES; PRESSURE; SIMULATION; TEMPERATURE; THREE DIMENSIONAL;

ALUMINUM SPUTTER DEPOSITION; ANISOTROPIC ETCHING; ISOTROPIC DEPOSITION; ISOTROPIC ETCHING; MULTILAYER SHAPE SIMULATOR; THREE DIMENSIONAL TOPOGRAPHY SIMULATOR;

LSI CIRCUITS;

EID: 0031076208     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557710     Document Type: Article

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