Simulation of SiO2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolution

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1896-1902

  Kokkoris, G ^a,b   Tserepi, A ^a   Boudouvis, A G ^b   Gogolides, E ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; COMPUTER SIMULATION; DEPOSITION; ELECTRIC REACTORS; EMISSION SPECTROSCOPY; FLUOROCARBONS; MAGNETIC FLUX; MATHEMATICAL MODELS; MICROELECTROMECHANICAL DEVICES; MICROELECTRONICS; OPTOELECTRONIC DEVICES; PLASMAS; PLASTIC FILMS; PROFILOMETRY; REACTIVE ION ETCHING; SILICA;

GAS FLUX; MICROTRENCHING; OPTICAL EMISSION SPECTROSCOPY; POLYMER FILMS;

ETCHING;

EID: 4344599086     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1738660     Document Type: Conference Paper

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