Etching of polysilicon in inductively coupled Cl2 and HBr discharges: IV. Calculation of feature charging in profile evolution

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1084-1095

  Mahorowala, Arpan P ^a   Sawin, Herbert H ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONDUCTIVE MATERIALS; ELECTRIC CHARGE; INDUCTIVELY COUPLED PLASMA; INSULATING MATERIALS; MONTE CARLO METHODS; PLASMA ETCHING; POISSON EQUATION; ULTRAVIOLET RADIATION;

FEATURE CHARGING;

POLYSILICON;

EID: 0035998534     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1481869     Document Type: Conference Paper

References (14)