-
1
-
-
4243084225
-
MxP+: A new dieletric etcher with enabling technology, high productivity, and low cost-of consumables
-
Mar.
-
H. Shan, E. Lee, M. Welch, B. Pu, J. Carducci, and K. Ke et al., "MxP+: A new dieletric etcher with enabling technology, high productivity, and low cost-of consumables," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 14, pp. 716-723, Mar. 1996.
-
(1996)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom.
, vol.14
, pp. 716-723
-
-
Shan, H.1
Lee, E.2
Welch, M.3
Pu, B.4
Carducci, J.5
Ke, K.6
-
2
-
-
0032650085
-
Surface science issues in plasma etching
-
Jan.
-
G. S. Oehrlein, M. F. Doemling, B. E. E. Kastenmeier, P. J. Matsuo, N. R. Rueger, and M. Shaepkens et al., "Surface science issues in plasma etching," IBM J. Res. Devel., vol. 43, pp. 181-197, Jan. 1999.
-
(1999)
IBM J. Res. Devel.
, vol.43
, pp. 181-197
-
-
Oehrlein, G.S.1
Doemling, M.F.2
Kastenmeier, B.E.E.3
Matsuo, P.J.4
Rueger, N.R.5
Shaepkens, M.6
-
3
-
-
0035271696
-
2 with equipment and feature scale models
-
Mar.
-
2 with equipment and feature scale models," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 19, pp. 524-538, Mar. 2001.
-
(2001)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.19
, pp. 524-538
-
-
Zhang, D.1
Kushner, M.J.2
-
4
-
-
0013178429
-
2/Si selective etching employing high density fluorocarbon plasma
-
May
-
2/Si selective etching employing high density fluorocarbon plasma," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 16, pp. 1043-1050, May 1998.
-
(1998)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom.
, vol.16
, pp. 1043-1050
-
-
Chinzei, Y.1
Ichiki, T.2
Ikegami, N.3
Feurprier, Y.4
Shindo, H.5
Horiike, Y.6
-
5
-
-
0031118260
-
Characteristics of very high-aspect-ratio contact hole etching
-
Apr.
-
N. Ikegami, A. Yabata, T. Matsui, J. Kanamori, and Y. Horiike, "Characteristics of very high-aspect-ratio contact hole etching," Jpn. J. Appl. Phys., pt. 1, vol. 36, pp. 2470-2476, Apr. 1997.
-
(1997)
Jpn. J. Appl. Phys., Pt. 1
, vol.36
, pp. 2470-2476
-
-
Ikegami, N.1
Yabata, A.2
Matsui, T.3
Kanamori, J.4
Horiike, Y.5
-
6
-
-
0001469692
-
3 dielectric etch discharges
-
July
-
3 dielectric etch discharges," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 17, pp. 1545-1551, July 1999.
-
(1999)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.17
, pp. 1545-1551
-
-
Jayaraman, R.1
McGrath, R.T.2
Hebner, G.A.3
-
7
-
-
0042335679
-
Plasma-assisted etching
-
J. L. Vossen and W. Kern, Eds. Boston, MA: Academic
-
H. W. Lehmann, "Plasma-assisted etching," in Thin Film Processes, 2nd ed, J. L. Vossen and W. Kern, Eds. Boston, MA: Academic, 1991, p. 687.
-
(1991)
Thin Film Processes, 2nd Ed
, pp. 687
-
-
Lehmann, H.W.1
-
8
-
-
0347756625
-
Etch rate control in a 27 MHz reactive ion etching system for ultralarge scale integrated circuit processing
-
July
-
T. Tatsumi, Y. Hikosaka, S. Morishita, and M. Sekine, "Etch rate control in a 27 MHz reactive ion etching system for ultralarge scale integrated circuit processing," Jr. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 17, pp. 1562-1569, July 1999.
-
(1999)
Jr. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.17
, pp. 1562-1569
-
-
Tatsumi, T.1
Hikosaka, Y.2
Morishita, S.3
Sekine, M.4
-
9
-
-
0033683042
-
High-performance silicon dioxide etching for less than 0.1-μm-high-aspect-ratio contact holes
-
Jan.
-
S. Samukawa and T. Mukai, "High-performance silicon dioxide etching for less than 0.1-μm-high-aspect-ratio contact holes," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 18, pp. 166-171, Jan. 2000.
-
(2000)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom.
, vol.18
, pp. 166-171
-
-
Samukawa, S.1
Mukai, T.2
-
10
-
-
0032358625
-
2/Si selective etching process
-
Jan.
-
2/Si selective etching process," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 16, pp. 233-238, Jan. 1998.
-
(1998)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.16
, pp. 233-238
-
-
Inayoshi, M.1
Ito, M.2
Hori, M.3
Goto, T.4
Hiramatsu, M.5
-
11
-
-
0025469780
-
A surface kinetic model for plasma polymerization with application to plasma etching
-
Aug.
-
J. Bariya, C. W. Frank, and J. P. McVittie, "A surface kinetic model for plasma polymerization with application to plasma etching," J. Electrochem. Soc., vol. 137, pp. 2575-2581, Aug. 1990.
-
(1990)
J. Electrochem. Soc.
, vol.137
, pp. 2575-2581
-
-
Bariya, J.1
Frank, C.W.2
McVittie, J.P.3
-
12
-
-
0034225198
-
Desorption species from fluorocarbon film by Ar+ion beam bombardment
-
July
-
M. Hayashi and K. Karahashi, "Desorption species from fluorocarbon film by Ar+ion beam bombardment," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 18, pp. 1881-1886, July 2000.
-
(2000)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.18
, pp. 1881-1886
-
-
Hayashi, M.1
Karahashi, K.2
-
13
-
-
0028405097
-
Analysis of fluorocarbon film deposited by highly selective oxide etching
-
Apr.
-
T. Akimoto, S. Furnoya, K. Harasima, and E. Ikawa, "Analysis of fluorocarbon film deposited by highly selective oxide etching," Jpn. J. Appl. Phys., pt. 1, vol. 33, pp. 2151-2156, Apr. 1994.
-
(1994)
Jpn. J. Appl. Phys., Pt. 1
, vol.33
, pp. 2151-2156
-
-
Akimoto, T.1
Furnoya, S.2
Harasima, K.3
Ikawa, E.4
-
16
-
-
0001620883
-
2 production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization
-
Aug.
-
2 production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization," J. Appl. Phys., vol. 85, pp. 3952-3959, Aug. 1999.
-
(1999)
J. Appl. Phys.
, vol.85
, pp. 3952-3959
-
-
Cunge, G.1
Booth, J.P.2
-
17
-
-
0018441483
-
Plasma etching-A discussion of mechanism
-
Mar.
-
J. W. Coburn and H. F. Winters, "Plasma etching-A discussion of mechanism," J. Vac. Sci. Technol., vol. 16, pp. 391-403, Mar. 1979.
-
(1979)
J. Vac. Sci. Technol.
, vol.16
, pp. 391-403
-
-
Coburn, J.W.1
Winters, H.F.2
-
19
-
-
0026191243
-
2 selective etching in a highly polymerized fluorocarbon plasma
-
July
-
2 selective etching in a highly polymerized fluorocarbon plasma," Jpn. J. Appl. Phys., vol. 30, pp. 1556-1561, July 1991.
-
(1991)
Jpn. J. Appl. Phys.
, vol.30
, pp. 1556-1561
-
-
Ikegami, N.1
Ozawa, N.2
Miyakawa, Y.3
Kanamori, J.4
-
20
-
-
0001741313
-
Model of etching profiles for ion-energy flux dependent etch rates in a collisionless plasma sheath
-
Apr.
-
B. Abraham-Shrauner and C. D. Wang, "Model of etching profiles for ion-energy flux dependent etch rates in a collisionless plasma sheath," J. Appl. Phys., vol. 77, pp. 3445-3449, Apr. 1995.
-
(1995)
J. Appl. Phys.
, vol.77
, pp. 3445-3449
-
-
Abraham-Shrauner, B.1
Wang, C.D.2
-
21
-
-
0030085064
-
Etching profiles and neutral shadowing in long trenches
-
Feb.
-
_, "Etching profiles and neutral shadowing in long trenches," J. Electrochem. Soc., vol. 143, pp. 672-676, Feb. 1996.
-
(1996)
J. Electrochem. Soc.
, vol.143
, pp. 672-676
-
-
-
22
-
-
0013240318
-
Neutral shadowing in circular cylindrical trench holes
-
Nov.
-
B. Abraham-Shrauner and W. Chen, "Neutral shadowing in circular cylindrical trench holes," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 14, pp. 3492-3595, Nov. 1996.
-
(1996)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom.
, vol.14
, pp. 3492-3595
-
-
Abraham-Shrauner, B.1
Chen, W.2
-
23
-
-
0031167697
-
Model for ion-initiated trench etching
-
June
-
B. Abraham-Shrauner, "Model for ion-initiated trench etching," IEEE Trans. Plasma Sci., vol. 25, pp. 433-438, June 1997.
-
(1997)
IEEE Trans. Plasma Sci.
, vol.25
, pp. 433-438
-
-
Abraham-Shrauner, B.1
-
24
-
-
0013231879
-
Analytic models for plasma-assisted etching of semiconductor trenches
-
July
-
_, "Analytic models for plasma-assisted etching of semiconductor trenches," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 12, pp. 2347-2351, July 1994.
-
(1994)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom.
, vol.12
, pp. 2347-2351
-
-
-
25
-
-
23744440186
-
Model for etch depth dependence on GaAs via hole diameter
-
May
-
B. Abraham-Shrauner, K. J. Nordheden, and Y. Lee, "Model for etch depth dependence on GaAs via hole diameter," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 17, pp. 961-964, May 1999.
-
(1999)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom.
, vol.17
, pp. 961-964
-
-
Abraham-Shrauner, B.1
Nordheden, K.J.2
Lee, Y.3
-
26
-
-
0013180689
-
Contact hole model for etch depth dependence
-
Jan.
-
B. Abraham-Shrauner, "Contact hole model for etch depth dependence," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 17, pp. 158-161, Jan. 1999.
-
(1999)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom.
, vol.17
, pp. 158-161
-
-
Abraham-Shrauner, B.1
-
27
-
-
0000129087
-
Ion distribution function in a weakly collisional sheath
-
Sept.
-
S. Hamaguchi, R. T. Farouki, and M. Dalvie, "Ion distribution function in a weakly collisional sheath," Phys. Rev. A, vol. 44, pp. 3804-3821, Sept. 1991.
-
(1991)
Phys. Rev. A
, vol.44
, pp. 3804-3821
-
-
Hamaguchi, S.1
Farouki, R.T.2
Dalvie, M.3
-
28
-
-
0026869406
-
Flux considerations in the coupling of Monte Carlo plasma sheath simulations with feature evolution models
-
May
-
M. Dalvie, R. T. Farouki, and S. Hamaguchi, "Flux considerations in the coupling of Monte Carlo plasma sheath simulations with feature evolution models," IEEE Trans. Electron Devices, vol. 39, pp. 1090-1099, May 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, pp. 1090-1099
-
-
Dalvie, M.1
Farouki, R.T.2
Hamaguchi, S.3
-
29
-
-
0013240319
-
Efficient shadow-test algorithm for the simulation of dry etching and topographical evolution
-
Feb.
-
O. Kwon, Y. Ban, and T. Won, "Efficient shadow-test algorithm for the simulation of dry etching and topographical evolution," J. Inst. Electron. Eng. Kor. D, vol. 36, pp. 41-47, Feb. 1999.
-
(1999)
J. Inst. Electron. Eng. Kor. D
, vol.36
, pp. 41-47
-
-
Kwon, O.1
Ban, Y.2
Won, T.3
-
30
-
-
0013282497
-
A combination of characteristics and Monte Carlo methods for etch profile simulation
-
May
-
J. Qiang and W. H. Choe, "A combination of characteristics and Monte Carlo methods for etch profile simulation," Appl. Math. Comput., vol. 91, pp. 179-195, May 1998.
-
(1998)
Appl. Math. Comput.
, vol.91
, pp. 179-195
-
-
Qiang, J.1
Choe, W.H.2
-
31
-
-
36549097874
-
Simulation of reactive ion etching pattern transfer
-
Oct.
-
E. S. G. Shaqfeh and C. W. Jurgensen, "Simulation of reactive ion etching pattern transfer," J. Appl. Phys., vol. 66, pp. 4664-4675, Oct. 1989.
-
(1989)
J. Appl. Phys.
, vol.66
, pp. 4664-4675
-
-
Shaqfeh, E.S.G.1
Jurgensen, C.W.2
-
32
-
-
0001039797
-
Simulation of profile evolution in silicon reactive ion etching with re-emission and surface diffusion
-
May
-
V. K. Singh, E. S. G. Shaqfeh, and J. P. McVittie, "Simulation of profile evolution in silicon reactive ion etching with re-emission and surface diffusion," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 10, pp. 1091-1104, May 1992.
-
(1992)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom.
, vol.10
, pp. 1091-1104
-
-
Singh, V.K.1
Shaqfeh, E.S.G.2
McVittie, J.P.3
-
33
-
-
0000821535
-
Modeling of physical etching based on the two-dimensional velocity distributions of ions and fast neutrals using the Boltzmann equation
-
Oct.
-
T. Tokonami and T. Makabe, "Modeling of physical etching based on the two-dimensional velocity distributions of ions and fast neutrals using the Boltzmann equation," J. Appl. Phys., vol. 72, pp. 3323-3329, Oct. 1992.
-
(1992)
J. Appl. Phys.
, vol.72
, pp. 3323-3329
-
-
Tokonami, T.1
Makabe, T.2
-
34
-
-
0033442835
-
Analytical modeling of silicon etch process in high density plasma
-
Sept.
-
S. Abdollahi-Alibeik, J. P. McVittie, K. C. Saraswat, V. Sukharev, and P. Schoenborn, "Analytical modeling of silicon etch process in high density plasma," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 17, pp. 2485-2491, Sept. 1999.
-
(1999)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.17
, pp. 2485-2491
-
-
Abdollahi-Alibeik, S.1
McVittie, J.P.2
Saraswat, K.C.3
Sukharev, V.4
Schoenborn, P.5
-
35
-
-
0031176681
-
A method for identifying sources of reactive ion etch lag and loading in a magnetically enhanced reactive ion etcher
-
July
-
M. J. Buie, J. T. P. Pender, and P. L. G. Ventzek, "A method for identifying sources of reactive ion etch lag and loading in a magnetically enhanced reactive ion etcher," Jpn. J. Appl. Phys., vol. 36, pp. 4838-4844, July 1997.
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, pp. 4838-4844
-
-
Buie, M.J.1
Pender, J.T.P.2
Ventzek, P.L.G.3
-
36
-
-
0028516606
-
Effects of deposition and ion scattering on profile control in submicron oxide etch
-
Oct.
-
H. Shan, B. K. Srinivasan, D. W. Jillie, J. S. Multani, and W. J. Lo, "Effects of deposition and ion scattering on profile control in submicron oxide etch," J. Electrochem. Soc., vol. 141, pp. 2904-2909, Oct. 1994.
-
(1994)
J. Electrochem. Soc.
, vol.141
, pp. 2904-2909
-
-
Shan, H.1
Srinivasan, B.K.2
Jillie, D.W.3
Multani, J.S.4
Lo, W.J.5
-
37
-
-
0031146692
-
Simulation study of micro-loading phenomena in silicon dioxide hole etching
-
May
-
A. Misaka and K. Harafuji, "Simulation study of micro-loading phenomena in silicon dioxide hole etching," IEEE Trans. Electron Devices, vol. 44, pp. 751-760, May 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 751-760
-
-
Misaka, A.1
Harafuji, K.2
-
38
-
-
84957228602
-
2/Ar electron cyclotron resonance plasma
-
July
-
2/Ar electron cyclotron resonance plasma," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 11, pp. 1283-1288, July 1993.
-
(1993)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.11
, pp. 1283-1288
-
-
Ding, J.1
Jenq, J.S.2
Kim, G.H.3
Maynard, H.L.4
Hamers, J.S.5
Hershkowitz, N.6
Taylor, J.W.7
-
39
-
-
0342456938
-
Silicon dioxide reactive ion etching dependence on sheath voltage
-
May
-
G. Fortuno, "Silicon dioxide reactive ion etching dependence on sheath voltage," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 4, pp. 744-747, May 1986.
-
(1986)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.4
, pp. 744-747
-
-
Fortuno, G.1
-
40
-
-
21344483042
-
Simulation of surface topography evolution during plasma etching by the method of characteristics
-
May
-
J. C. Arnold, H. H. Sawin, M. Dalvie, and S. Hamaguchi, "Simulation of surface topography evolution during plasma etching by the method of characteristics," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 12, pp. 620-635, May 1994.
-
(1994)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.12
, pp. 620-635
-
-
Arnold, J.C.1
Sawin, H.H.2
Dalvie, M.3
Hamaguchi, S.4
-
41
-
-
0034156118
-
2 and HBr plasma etching of silicon
-
Mar.
-
2 and HBr plasma etching of silicon," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 18, pp. 820-833, Mar. 2000.
-
(2000)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom.
, vol.18
, pp. 820-833
-
-
Vyvoda, M.A.1
Li, M.2
Graves, D.B.3
Lee, H.4
Malyshev, M.V.5
Klemens, F.P.6
-
42
-
-
0346651219
-
Charging of pattern features during plasma etching
-
Oct.
-
J. C. Arnold and H. H. Sawin, "Charging of pattern features during plasma etching," J. Appl. Phys., vol. 70, pp. 5314-5317, Oct. 1991.
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 5314-5317
-
-
Arnold, J.C.1
Sawin, H.H.2
-
43
-
-
0035326370
-
Plasma etch profiles of passivated open-area trenches
-
May
-
B. Abraham-Shrauner, "Plasma etch profiles of passivated open-area trenches," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 19, pp. 711-721, May 2001.
-
(2001)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom.
, vol.19
, pp. 711-721
-
-
Abraham-Shrauner, B.1
-
44
-
-
0035441622
-
4
-
Sept.
-
4," J. Fac. Sci. Technol. A, Vac. Surf. Films, vol. 19, pp. 2089-2096, Sept. 2001.
-
(2001)
J. Fac. Sci. Technol. A, Vac. Surf. Films
, vol.19
, pp. 2089-2096
-
-
Matsui, M.1
Tatsumi, T.2
Sekine, M.3
-
45
-
-
21344499352
-
3
-
Mar.
-
3," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 12, pp. 323-332, Mar. 1994.
-
(1994)
J. Vac. Sci. Technol. A, Vac. Surf. Films
, vol.12
, pp. 323-332
-
-
Oehrlein, G.S.1
Zhang, Y.2
Vender, D.3
Haverlag, M.4
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