SCOPUS 정보 검색 플랫폼

Volumn 105, Issue 1, 2009, Pages

Real-time studies of surface roughness development and reticulation mechanism of advanced photoresist materials during plasma processing

(8) Pal, A R a,b Bruce, R L a,b Weilnboeck, F a,b Engelmann, S a,b,d Lin, T a,c Kuo, M S a,b Phaneuf, R a,c Oehrlein, G S a,b

a UNIVERSITY OF MARYLAND (United States)

b The Institute for Research in Electronics and Applied Physics (United States)

c LABORATORY FOR PHYSICAL SCIENCES (United States)

d INSTITUTE OF ADVANCED STUDY IN SCIENCE AND TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AR PLASMAS; ARGON PLASMAS; EFFECTIVE MEDIUM APPROXIMATION; FILM SURFACES; GLASS TRANSITION TEMPERATURE; INTENSITY OF LIGHT; LASER LIGHT SCATTERING; LOW PRESSURE PLASMA ETCHING; MODIFIED LAYER; MODIFIED SURFACES; MOLECULAR CHAIN MOTION; ORGANIC MATERIALS; PHOTORESIST MATERIALS; PLASMA PROCESSING; REAL-TIME STUDIES; ROUGH LAYER; ROUGHNESS DEVELOPMENT; SUBNANOMETER; THREE-LAYER MODELS;

ARGON; ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; FILMS; GLASS; GLASS TRANSITION; GROWTH (MATERIALS); ION BOMBARDMENT; LIGHT SCATTERING; METAL ANALYSIS; PHOTORESISTORS; PLASMA DEVICES; PLASMA ETCHING; PLASMAS; REFRACTION; SUPERCONDUCTING TRANSITION TEMPERATURE; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACE TREATMENT;

SURFACE MORPHOLOGY;

EID: 67649755935 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3055268 Document Type: Article

Times cited : (18)

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