Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. I. Feature scale modeling

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 1911-1918

  Hoang, John ^a   Hsu, Cheng Che ^a,b   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT COUPLINGS; DISCRETE CELLS; EXPERIMENTAL OBSERVATIONS; FEATURE PROFILE EVOLUTIONS; MONTE CARLO; NOVEL SURFACES; PARTICLE COUNTS; PLASMA PARAMETERS; SCALE MODELS; SHALLOW TRENCH ISOLATIONS; SURFACE NORMALS;

CHLORINE; MOSFET DEVICES; SEMICONDUCTING SILICON;

PLASMAS;

EID: 57249111771     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2998756     Document Type: Article

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