On the link between electron shadowing and charging damage

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 5, 1997, Pages 1839-1842

  Hwang, Gyeong S ^a   Giapis, Konstantinos P ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000736292     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589336     Document Type: Article

References (12)

1. K. Hashimoto, Jpn. J. Appl. Phys. 32, 6019 (1993); 33, 6013 (1994).
2. K. Hashimoto, Jpn. J. Appl. Phys. 32, 6019 (1993); 33, 6013 (1994).
3. G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 15, 70 (1997).
4. N. Fujiwara, T. Maruyama, and M. Yoneda, Jpn. J. Appl. Phys. 34, 2095 (1995); 35, 2450 (1996).
5. N. Fujiwara, T. Maruyama, and M. Yoneda, Jpn. J. Appl. Phys. 34, 2095 (1995); 35, 2450 (1996).
6. T. Nozawa, T. Kinoshita, T. Nishizuka, A. Narai, T. Inoue, and A. Nakaue, Jpn. J. Appl. Phys. 34, 2107 (1995).
7. G. S. Hwang and K. P. Giapis, J. Appl. Phys. 82, 566 (1997).
8. G. S. Hwang, C. M. Anderson, M. J. Gordon, T. A. Moore, T. K. Minton, and K. P. Giapis, Phys. Rev. Lett. 77, 3049 (1996).
9. No overetching time is stated because it is impossible to calibrate the reactive ion flux without an etching experiment of a structure similar to the simulated one.
10. The flux has been normalized with respect to the total ion flux entering the outermost trench.
11. 2 interface - the "notching" area - to make the comparison meaningful.
12. G. S. Hwang and K. P. Giapis, Appl. Phys. Lett. 70, 2377 (1997).