Beam study of the Si and SiO2 etching processes by energetic fluorocarbon ions

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 5172-5179

  Toyoda, H ^a   Morishima, H ^a   Fukute, R ^a   Hori, Y ^a   Murakami, I ^a   Sugai, H ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ASPECT RATIO; COMPUTER SIMULATION; ETCHING; FLUOROCARBONS; ION BEAMS; MASS SPECTROMETRY; MOLECULAR DYNAMICS; SILICA; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

MOLECULAR ADSORPTION; MOLECULAR DYNAMICS (MD) SIMULATION; WET CHEMICAL ETCHING;

SURFACE CHEMISTRY;

EID: 2442460004     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690094     Document Type: Article

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