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Volumn 20, Issue 5, 2002, Pages 1536-1556

Semiempirical profile simulation of aluminum etching in a Cl2/BCl3 plasma

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; ALUMINUM; BORON COMPOUNDS; CHLORINE; COMPUTER SIMULATION; DESORPTION; MOLECULAR DYNAMICS; PHOTORESISTS; PROFILOMETRY; SPUTTERING;

EID: 0036747764     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1494818     Document Type: Article
Times cited : (45)

References (85)
  • 1
    • 85008333346 scopus 로고    scopus 로고
    • University of Illinois, mjk@uiuc.edu
    • Developed by M. Kushner at the University of Illinois, mjk@uiuc.edu, http://uigelz.ece.uiuc.edu
    • Kushner, M.1
  • 3
    • 85008389501 scopus 로고    scopus 로고
    • Lam Research Corp., U.S. Patent No. 4, 948, 458, issued 14, August 1990
    • J.S. Ogle, Lam Research Corp., U.S. Patent No. 4, 948, 458, issued 14, August 1990
    • Ogle, J.S.1
  • 52
    • 85008315093 scopus 로고
    • Prentice-Hall, Englewood Cliffs, NJ
    • Walter J. Moore, Physical Chemistry, 4th ed. (Prentice-Hall, Englewood Cliffs, NJ, 1972), p. 497
    • (1972) Physical Chemistry, 4th ed , pp. 497
    • Moore, W.J.1
  • 68
    • 85008333332 scopus 로고    scopus 로고
    • note
    • 3 plasmas at varying pressures and powers
  • 80
    • 85008396957 scopus 로고    scopus 로고
    • note
    • -1 to match better the open area Al etch rate. The better fit at lower chlorine atom flux is consistent with the reactor model being calibrated at 10 mTorr while the wafer processed here was etched at 9 mTorr
  • 83
    • 85008396968 scopus 로고    scopus 로고
    • note
    • 2 of 0.045 [in reasonable agreement with previous studies (Refs. 53, 84, and 85)] electron impact and heavy-particle collisions provided by in the HPEM database, ion and neutral momentum equations for transport, slip boundary conditions, and nozzle to pump flow with constant pressure


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.