Etching yield of SiO2 irradiated by F+, CF x+ (x= 1,2,3) ion with energies from 250 to 2000 eV

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1166-1168

  Karahashi, Kazuhiro ^a   Yanai, Ken Ichi ^a   Ishikawa, Kenji ^a   Tsuboi, Hideo ^a   Kurihara, Kazuaki ^a   Nakamura, Moritaka ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION ENERGY; MOMENTUM FUNCTIONS; ULTRAHIGH VACUUM (UHV); WET SURFACE CLEANING;

ETCHING; FLUORINE; ION BEAMS; IRRADIATION; LIGHT INTERFERENCE; REFRACTIVE INDEX; SEMICONDUCTOR DEVICES; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON COMPOUNDS;

EID: 4344590111     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1761119     Document Type: Article

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