Notch formation by stress enhanced spontaneous etching of polysilicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1870-1873

  Chang, Jane P ^a   Sawin, Herbert H ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); ION BOMBARDMENT; PASSIVATION; PLASMA ETCHING; STRESSES;

SPONTANEOUS ETCHING;

POLYSILICON;

EID: 0035440463     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1401752     Document Type: Article

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