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Volumn 21, Issue 6, 2003, Pages 2334-2343

Focused ion beam milling of diamond: Effects of H 2O on yield, surface morphology and microstructure

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAM (FIB) MILLING; ION INCIDENCE ANGLES;

EID: 0942299743     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (94)

References (60)
  • 8
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    • Ph.D. dissertation: North Carolina State University
    • K. F. Jarausch, Ph.D. dissertation: North Carolina State University, (1999).
    • (1999)
    • Jarausch, K.F.1
  • 13
    • 0942283618 scopus 로고
    • edited by Gordon Davies (INSPEC, London)
    • J. E. Field, in Properties and Growth of Diamond, edited by Gordon Davies (INSPEC, London, 1994), pp. 52-53.
    • (1994) Properties and Growth of Diamond , pp. 52-53
    • Field, J.E.1
  • 26
    • 0033152347 scopus 로고    scopus 로고
    • M. J. Vasile, J. Xie, and R. Nassar, J. Vac. Sci. Technol. B 17, 3085 (1999); M. J. Vasile, R. Nassar, J. Xie, and H. Guo, Micron 30, 235 (1999).
    • (1999) Micron , vol.30 , pp. 235
    • Vasile, M.J.1    Nassar, R.2    Xie, J.3    Guo, H.4
  • 29
    • 84862031574 scopus 로고    scopus 로고
    • rms, of 2.0-3.0 nm
    • rms, of 2.0-3.0 nm.
  • 30
    • 0942283638 scopus 로고    scopus 로고
    • This represents the total time to complete a single scan and return to the starting pixel
    • This represents the total time to complete a single scan and return to the starting pixel.
  • 32
    • 0942294636 scopus 로고    scopus 로고
    • note
    • TRIM calculations of Y(θ) model Ga icn impingement on diamond flat surface, assuming a lattice binding energy of 3 eV, a surface binding energy of 7.4 eV, and a displacement energy of 28 eV.
  • 39
    • 0942294608 scopus 로고    scopus 로고
    • note
    • 36 A scan size of 100 × 100 μm was selected prior to defining the 12 × 12 μm box. The larger area consists of a 512 × 512 array of pixels.
  • 49
    • 0000052564 scopus 로고    scopus 로고
    • S. Park, B. Kahng, H. Jeong, and A.-L. Barabasi, Phys. Rev. Lett. 83, 3486 (1999); M. A. Makeev and A.-L. Barabasi, Appl. Phys. Lett. 71, 2800 (1997).
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 2800
    • Makeev, M.A.1    Barabasi, A.-L.2
  • 56
    • 0013371039 scopus 로고    scopus 로고
    • I. Koponen, M. Hautala, and O. P. Sievänen, Phys. Rev. Lett. 78, 2612 (1997); S. Habenicht, K. P. Lieb, W. Bolse, U. Geyer, F. Roccaforte, and C. Ronning, Nucl. Instrum. Methods Phys. Res. 161-163, 958 (2000).
    • (1997) Phys. Rev. Lett. , vol.78 , pp. 2612
    • Koponen, I.1    Hautala, M.2    Sievänen, O.P.3
  • 59
    • 0942305223 scopus 로고    scopus 로고
    • note
    • Previous FIB sputtering (without gas assist) by Datta et al. (Ref. 40) shows the onset of ripples in diamond at θ = 40° for E = 50 keV and at θ = 50° for E = 10 keV.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.