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84862031574
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rms, of 2.0-3.0 nm
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rms, of 2.0-3.0 nm.
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30
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0942283638
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-
This represents the total time to complete a single scan and return to the starting pixel
-
This represents the total time to complete a single scan and return to the starting pixel.
-
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32
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0942294636
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note
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TRIM calculations of Y(θ) model Ga icn impingement on diamond flat surface, assuming a lattice binding energy of 3 eV, a surface binding energy of 7.4 eV, and a displacement energy of 28 eV.
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35
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0020497860
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0942294608
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36 A scan size of 100 × 100 μm was selected prior to defining the 12 × 12 μm box. The larger area consists of a 512 × 512 array of pixels.
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0942305223
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note
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Previous FIB sputtering (without gas assist) by Datta et al. (Ref. 40) shows the onset of ripples in diamond at θ = 40° for E = 50 keV and at θ = 50° for E = 10 keV.
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