Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 647-653

  Goldfarb, Dario L ^a   Mahorowala, Arpan P ^a   Gallatin, Gregg M ^a   Petrillo, Karen E ^a   Temple, Karen ^a   Angelopoulos, Marie ^a   Rasgon, Stacy ^b   Sawin, Herbert H ^b   Allen, Scott D ^c   Lawson, Margaret C ^c   Kwong, Ranee W ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; IMAGING TECHNIQUES; LITHOGRAPHY; MASKS; MULTILAYERS; PHOTORESISTORS; PLASMA ETCHING; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SHOT NOISE; SURFACE ROUGHNESS;

IMAGE TRANSFER; LINE EDGE ROUGHNESS (LER); SIDEWALL ROUGHNESS (SWR); THIN-FILM IMAGING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 2342470006     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1667513     Document Type: Article

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