Impact of thin resist processes on post-etch LER

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 213-224

  Mahorowala, Arpan P ^a   Goldfarb, Dario L ^a   Temple, Karen ^a   Petrillo, Karen E ^a   Pfeiffer, Dirk ^a   Babich, Katherina ^a   Angelopoulos, Marie ^a   Gallatin, Gregg ^a   Rasgon, Stacy ^b   Sawin, Herbert H ^b   Allen, Scott D ^c   Lang, Robert N ^c   Lawson, Margaret C ^c   Kwong, Ranee W ^c   Chen, Kuang Jung ^c   Li, Wenjie ^c   Varanasi, Pushkara R ^c   Sanchez, Martha I ^d   Ito, Hiroshi ^d   Wallraff, Greg M ^d   Allen, Robert D ^d   more..

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c IBM MICROELECTRONICS   (United States)

^d IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

157 nm resist; 193 nm resist; 248 nm resist; AFM; Anti reflective coating; ARC; Fluorine content; Hard mask; LER; Oxide etch; Sidewall roughness; Thin resist

Indexed keywords

ANTIREFLECTION COATINGS; ATOMIC FORCE MICROSCOPY; FLUORINE; IMAGE ANALYSIS; LITHOGRAPHY; MASKS; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; THICKNESS MEASUREMENT;

HARD MASK; SIDEWALL ROUGHNESS; SUBSTRATE ROUGHENING;

PHOTORESISTS;

EID: 0141611775     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485168     Document Type: Conference Paper

References (8)

1. G. W. Reynolds and J. W. Taylor, "Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography", JVST B 17(2), pp. 334-344 (1999).
2. http://member.itrs.net/Files/2002Update/2001ITRS/ExecSum.pdf
3. T. Tanaka, M. Morigami, and N. Atoda, "Mechanism of Resist Pattern Collapse during Development Process", Jpn. J. Appl. Phys., Part 1 32, pp. 6059-6064 (1993).
4. M. Armacost et al., "Plasma-etching processes for ULSI semiconductor circuits", IBM J. Res. Develop. 43 (1/2), pp. 39-72 (1999).
5. A. Mahorowala et al., "Tunable anti reflective coatings with built in hard mask properties facilitating thin resist processing", Proc. SPIE 4343, pp. 306-316 (2001).
6. T. Itani et al., "Characterization of fluoropolymers for 157 nm chemically amplified resist", JVST B 19(6), pp. 2705-2708 (2001).
7. N. Fender et al., "Characterization of New Aromatic Polymers for 157 nm Photoresist Applications", Proc. SPIE 4345, pp. 417-427 (2001).
8. Q. Lin et al., "A High Resolution 248 nm Bilayer Resist", Proc. SPIE 3678, pp. 241-250 (1999).