Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1425-1439

  Osano, Yugo ^a,b   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b NIKON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMIC PHYSICS; ATOMS; CHEMICAL OXYGEN DEMAND; CHLORINE; CHLORINE COMPOUNDS; DESORPTION; ELECTROLYSIS; ETCHING; FLUXES; IONS; MICROSTRUCTURAL EVOLUTION; NONMETALS; OXIDATION; OXYGEN; PASSIVATION; PHOTORESISTS; PLASMA DEPOSITION; PLASMAS; POLYSILICON; RATE CONSTANTS; SILICON; SUBSTRATES; SURFACE CHEMISTRY; SURFACE REACTIONS; SURFACE ROUGHNESS; TWO DIMENSIONAL;

ATOMIC SCALES; ATOMIC SIZES; BOTTOM SURFACES; CELLULAR MODELING; CHEMICAL CONSTITUENTS; CHEMICAL ETCHING; COMPUTATIONAL DOMAIN; CRITICAL DIMENSIONS; ETCH BYPRODUCTS; ETCH PRODUCTS; ETCH RATES; FEATURE PROFILE EVOLUTION; GATE ETCHING; HIGH-DENSITY; ION ENERGIES; ION FLUXES; ION-ENHANCED ETCHING; LATERAL ETCHING; MICROSCOPIC UNIFORMITY; MICROSTRUCTURAL FEATURES; MONTE-CARLO CALCULATIONS; NANO-METER SCALE; NUMERICA L RESULTS; PASSIVATION LAYERS; POLY-SI; RATIO-DEPENDENCE; RE-DEPOSITION; REDUCED OXYGEN; RIE LAG; SI ATOMS; SPACE WIDTH; STICKING PROBABILITY; SUBSTRATE TEMPERATURE; SURFACE OXIDATIONS; SYNERGISTIC EFFECTS; VELOCITY COMPONENTS;

REACTIVE ION ETCHING;

EID: 49749112419     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2958240     Document Type: Article

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