Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 1850-1858

  Hua, Xuefeng ^a,b,e   Engelmann, S ^e   Oehrlein, G S ^e   Jiang, P ^c   Lazzeri, P ^d   Iacob, E ^d   Anderle, M ^d  

^a Bldg 142   (United States)

^b The Institute for Research in Electronics and Applied Physics   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d ITC IRST   (Italy)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHIC PATTERNING; PHOTORESIST MATERIALS; SIDEWALLS; SURFACE/LINE EDGE ROUGHENING;

CARBONYLATION; LITHOGRAPHY; NANOTECHNOLOGY; PHOTORESISTORS; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMAS;

EID: 33746474735     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2217973     Document Type: Article

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