Mixing-layer kinetics model for plasma etching and the cellular realization in three-dimensional profile simulator

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 2, 2009, Pages 388-403

  Guo, Wei ^a   Bai, Bo ^b   Sawin, Herbert H ^b  

^a Massachusetts Institute of Technology   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC MIXING; CELLULAR COMPOSITIONS; CONCENTRATION OF; DISCRETE EVENTS; DOMINANT PRODUCTS; ELEMENTAL COMPOSITIONS; ETCHING CONDITIONS; ION-ENHANCED ETCHINGS; KINETICS MODELING; KINETICS MODELS; LAYER MODELS; MIXING LAYERS; MONTE CARLO PROFILE SIMULATORS; NEAREST NEIGHBORS; OPERATING CONDITIONS; PHYSICAL SPUTTERING; PLASMA-SURFACE INTERACTIONS; POLY-SI; QUANTITATIVE AGREEMENTS; RATE COEFFICIENTS; SITE MODELING; STATISTICAL CONCEPTS; SURFACE COMPOSITIONS; TOP SURFACES;

ADSORPTION; CHLORINE; IONS; MOSFET DEVICES; PLASMA ETCHING; PLASMA INTERACTIONS; POLYSILICON; PROBABILITY; PROBABILITY DENSITY FUNCTION; REACTION RATES; THREE DIMENSIONAL;

CHEMICAL ANALYSIS;

EID: 61449182640     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3085722     Document Type: Article

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