Integrated non-SO 2 underlayer and improved line-edge-roughness dielectric etch process using 193 nm bilayer resist

Applied Physics Letters

Volumn 88, Issue 23, 2006, Pages

  Bhatnagar, Parijat ^a   Panda, Siddhartha ^b   Edleman, Nikki L ^b   Allen, Scott D ^b   Wise, Richard ^b   Mahorowala, Arpan ^c  

^a Cornell University   (United States)

^b IBM MICROELECTRONICS   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOROPHOSPHOSILICATE GLASS; CRITICAL DIMENSION (CD); LINE-EDGE ROUGHNESS (LER);

BOROPHOSPHATE GLASS; OPTICAL RESOLVING POWER; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SURFACE ROUGHNESS;

THIN FILMS;

EID: 33745021099     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2210086     Document Type: Article

References (27)

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