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Volumn 374, Issue 2, 2000, Pages 175-180

Plasma interactions with high aspect ratio patterned surfaces: Ion transport, scattering, and the role of charging

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; MASKS; PLASMA ETCHING; TRANSPORT PROPERTIES;

EID: 0034292308     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01149-4     Document Type: Article
Times cited : (21)

References (11)
  • 4
    • 84912965991 scopus 로고
    • A translational energy barrier of 0.5-1.0 eV has been predicted for F-atom reaction on a fully fluorinated Si(100) surface'
    • Schoolcraft S., Garrison B. A translational energy barrier of 0.5-1.0 eV has been predicted for F-atom reaction on a fully fluorinated Si(100) surface'. J. Vac. Sci. Technol. A. 8:1990;3496.
    • (1990) J. Vac. Sci. Technol. a , vol.8 , pp. 3496
    • Schoolcraft, S.1    Garrison, B.2
  • 5
    • 5844345850 scopus 로고    scopus 로고
    • + etching of silicon
    • the number was obtained by extrapolating etch yield data at higher ion energies
    • + etching of silicon, J. Vac. Sci. Technol. A 15, 610 (1997); the number was obtained by extrapolating etch yield data at higher ion energies.
    • (1997) J. Vac. Sci. Technol. a , vol.15 , pp. 610
    • Chang, J.1    Sawin, H.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.