Complete plasma physics, plasma chemistry, and surface chemistry simulation of SiO2 and Si etching in CF4 plasmas

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 391-394

  Gogolides, E ^a   Vauvert, P ^a   Rhallabi, A ^b   Turban, G ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISTRY; COMPUTER SIMULATION; COMPUTER SOFTWARE; FLUOROCARBONS; PHYSICS; PLASMAS; SILICA; SILICON;

PREDICTIVE MODELS;

PLASMA ETCHING;

EID: 4243765108     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00090-2     Document Type: Article

References (9)

1. I. E. Gogolides, Proc. Dry Plasma Symp., Jpn. J. Appl. Phys. 36 Pt 1, 4B, 2435-42 (1997).
2. W. L. Morgan and B. M. Penetrante, Comput. Phys. Commun. 58 (1990) 127.
3. N. V. Mantzaris, E. Gogolides and A. G. Boudouvis, Plasma Chem. Plasma Process. 16 (1996) 301.
4. C Lee, M. A. Lieberman, J. Vac. Sci. Technol. A13 (2) (1995).
5. D. C. Gray, I. Tepermeister, H.H. Sawin, J. Vac. Sci. Technol. B 11 (4), 1243-57 (1993).
6. 2, PhD Dissertation, Dept. of Chemical Engng., Massachusetts. Inst. of Technol., USA 1992.
7. M. Haverlag, Plasma Chemistry of Fluorocarbon RF Discharges used for Dry Etching, PhD. Thesis, Technical University of Eindhoven 1991.
8. J.M.E. Harper, J.J. Cuomo, P.A. Leary, and G.M. Summa, H.R. Kaufman, and F.J. Bresnock, J. Electrochem. Soc. 128(5), 1077 (1981).
9. J. Ding, J.S. Jeng, G.H. Kim, H.L. Maynard, J.S. Hamers, N. Hershkowitz, and J.W. Taylor, J. Vac. Sci. Technol. A 11(4), 1283 (1993).