SCOPUS 정보 검색 플랫폼

Volumn 590, Issue , 2008, Pages 141-174

Present status of deep UV nitride light emitters

(2) Khan, Asif a Balakrishnan, Krishnan a

a University of South Carolina (United States)

Author keywords

AlGaN AllnGaN; AlN; Deep UV; Epitaxy; GaN; Growth; Laser diode; Light emitting diode; MOCVD; Pulsed lateral overgrowth; UV

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; CURRENT DENSITY; DIODES; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH (MATERIALS); III-V SEMICONDUCTORS; INDIUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR LASERS; ULTRAVIOLET SPECTROSCOPY; WIDE BAND GAP SEMICONDUCTORS;

ALGAN; DEEP UV; LATERAL OVERGROWTH; LIGHT EMITTING DEVICES; OPTOELECTRONIC SYSTEMS; TECHNICAL DEVELOPMENT; ULTRA-VIOLET SPECTRUMS; ULTRAVIOLET LIGHT EMITTING DIODES;

ALUMINUM ALLOYS;

EID: 67749113623 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.590.141 Document Type: Article

Times cited : (3)

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