Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

Applied Physics Letters

Volumn 84, Issue 17, 2004, Pages 3394-3396

  Fischer, A J ^a   Allerman, A A ^a   Crawford, M H ^a   Bogart, K H A ^a   Lee, S R ^a   Kaplar, R J ^a   Chow, W W ^a   Kurtz, S R ^a   Fullmer, K W ^a   Figiel, J J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT CURRENT (DC); DISLOCATION DENSITY; EPITAXIAL STRUCTURES; OPTICAL EMITTERS;

CHARGE COUPLED DEVICES; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; ENERGY GAP; FLUORESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NUCLEATION; PLASMA ETCHING; QUANTUM EFFICIENCY; RAPID THERMAL ANNEALING; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 2542504577     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1728307     Document Type: Article

References (14)

1. T. Nishida and N. Kobayashi, Phys. Status Solidi A 188, 113 (2001); T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 78, 3927 (2001).
2. T. Nishida and N. Kobayashi, Phys. Status Solidi A 188, 113 (2001); T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 78, 3927 (2001).
3. M. Iwaya, S. Takanami, A. Miyazaki, Y. Wanatabe, S. Kamiyama, H. Amano, and I. Akasaki, Phys. Status Solidi A 188, 117 (2001).
4. T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, I. P. Ao, J. Bai, H. D. Li, and S. Sakai, J. Cryst. Growth 235, 177 (2002).
5. H. Hirayama, A. Kinoshita, A. Hirata, and Y. Aoyagi, Phys. Status Solidi A 188, 83 (2001).
6. V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatelov, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, Appl. Phys. Lett. 79, 4240 (2001).
7. A. Kinoshita, H. Hirayama, M. Ainoya, Y. Aoyagi, and A. Hirata, Appl. Phys. Lett. 77, 175 (2000).
8. A. Chitnis, J. P. Zhang, V. Adivarahan, M. Shatalov, S. Wu, R. Pachipu-lusu, V. Mandavilli, and M. A. Khan, Appl. Phys. Lett. 82, 2565 (2003).
9. G. Kipshidze, V. Kuryatkov, B. Borisov, M. Holtz, S. Nikishin, and H. Temkin, J. Appl. Phys. 93, 1363 (2003).
10. J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipu-lusu, M. Shatalov, G. Simin, J. W. Yang, and M. A. Khan, Appl. Phys. Lett. 81, 4910 (2002).
11. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 83, 4701 (2003).
12. H. M. Wang, J. P. Zhang, C. Q. Chen, Q. Fareed, J. W. Yang, and M. A. Khan, Appl. Phys. Lett. 81, 604 (2002).
13. R. J. Shul, C. G. Willison, M. M. Bridges, J. Han, J. W. Lee, S. J. Pearton, C. R. Abernathy, J. D. Mackensie, and S. M. Donovan, Solid-State Electron. 42, 2269 (1998).
14. J. P. Zhang, S. Wu, S. Rai, V. Mandavilli, V. Adivarahan, A. Chitnis, M. Shatalov, and M. A. Khan, Appl. Phys. Lett. 83, 3456 (2003).