AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

Applied Physics Letters

Volumn 80, Issue 20, 2002, Pages 3682-3684

  Kipshidze, G ^a   Kuryatkov, V ^a   Borisov, B ^a   Holtz, M ^b   Nikishin, S ^a   Temkin, H ^a  

^a Department of Electrical and Computer Engineering   (United States)

^b TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALN; N- AND P-TYPE DOPING; P-TYPE; SI (1 1 1); ULTRAVIOLET LIGHT-EMITTING DIODES;

DIODES; GALLIUM; GALLIUM NITRIDE; HOLE CONCENTRATION; LIGHT EMISSION; LIGHT EMITTING DIODES; SILICON; ULTRAVIOLET RADIATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956010314     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480886     Document Type: Article

References (21)

1. K. Tadamoto, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, Jpn. J. Appl. Phys., Part 2 40, L583 (2001). jjc JAPLD8 0021-4922
2. T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 78, 3927 (2001). apl APPLAB 0003-6951
3. T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 79, 711 (2001). apl APPLAB 0003-6951
4. A. Kinoshita, H. Hirayama, M. Ainoya, Y. Aoyagi, and A. Hirata, Appl. Phys. Lett. 77, 175 (2000). apl APPLAB 0003-6951
5. H. Hirayama, A. Kinoshita, and Y. Ayoagi, RIKEN Rev. 33, 28 (2001); 8zd RIREE6 0919-3405
6. H. Hirayama, A. Kinoshita, and Y. Ayoagi, Proceedings of the Fourth International Conference on Nitride Semiconductors (ICNS-4), Denver, Colorado, 2001 p. B5.1.
7. M. A. Khan, V. Adivarahan, J. P. Zhang, C. Chen, E. Kuokstis, A. Chitnis, M. Shatalov, J. Wei, and G. Simin, Jpn. J. Appl. Phys., Part 2 40, L921 (2001). jjc JAPLD8 0021-4922
8. V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, G. Simin, and M. A. Khan, Appl. Phys. Lett. 79, 4240 (2001). apl APPLAB 0003-6951
9. S. A. Nikishin, V. G. Antipov, S. Francoeur, N. N. Faleev, G. A. Seryogin, H. Temkin, T. I. Prokofyeva, M. Holtz, and S. N. G. Chu, Appl. Phys. Lett. 75, 2073 (1999). apl APPLAB 0003-6951
10. G. Kipshidze, V. Kuryatkov, B. Borisov, S. Nikishin, and H. Temkin (unpublished).
11. G. Kipshidze, H. P. Schenk, A. Fissel, U. Kaiser, J. Schulze, W. Richter, M. Weihnacht, R. Kunze, and J. Kräusslich, Semiconductors 33, 1241 (1999). sem SMICES 1063-7826
12. S. A. Nikishin, V. G. Antipov, S. Francoeur, N. N. Faleev, G. A. Seryogin, V. A. Elyukhin, H. Temkin, T. I. Prokofyeva, M. Holtz, A. Konkar, and S. Zollner, Appl. Phys. Lett. 75, 484 (1999); apl APPLAB 0003-6951
13. S. A. Nikishin, N. N. Faleev, A. S. Zubrilov, V. G. Antipov, and H. Temkin, 76, 3028 (2000); apl APPLAB 0003-6951
14. S. Nikishin, G. Kipshidze, V. Kuryatkov, K. Choi, Ǐu. Gherasoiu, L. Grave de Peralta, A. Zubrilov, V. Tretyakov, K. Copeland, T. Prokofyeva, M. Holtz, R. Asomoza, Y. Kudryavtsev, and H. Temkin, J. Vac. Sci. Technol. B 19, 1409 (2001). jvb JVTBD9 0734-211X
15. G. Kipshidze, S. Nikishin, V. Kuryatkov, Yu. Kudryavtsev, R. Asomoza, and H. Temkin, Proceedings of the Fourth International Conference on Nitride Semiconductors (ICNS-4), Denver, Colorado, 2001, B 14.3.
16. K. H. Ploog and R. Nötzel, Physica E (Amsterdam) 11, 78 (2001). 2by PELNFM 1386-9477
17. E. F. Schubert, W. Grieshaber, and I. D. Goepfert, Appl. Phys. Lett. 69, 3737 (1996). apl APPLAB 0003-6951
18. P. Kozodoy, M. Hansen, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 74, 3681 (1999). apl APPLAB 0003-6951
19. K. Kumakura and N. Kobayashi, Jpn. J. Appl. Phys., Part 2 38, L1012 (1999). jjc JAPLD8 0021-4922
20. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Jpn. J. Appl. Phys., Part 2 36, L1568 (1997). jjc JAPLD8 0021-4922
21. E. Waldron, J. W. Graff, and E. F. Schubert, Appl. Phys. Lett. 79, 2737 (2001). apl APPLAB 0003-6951