AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates

Applied Physics Letters

Volumn 84, Issue 6, 2004, Pages 1002-1003

  Nishida, Toshio ^a   Makimoto, Toshiki ^a   Saito, Hisao ^b   Ban, Tomoyuki ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NEL Technosupport   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL SYMMETRY; CRYSTALLOGRAPHY; EMISSION SPECTROSCOPY; EXTRACTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL CONDUCTIVITY; THICKNESS MEASUREMENT; TRANSPARENCY; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM NITRIDE; NITRIDE DEVICE STRUCTURES;

LIGHT EMITTING DIODES;

EID: 1542366686     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1646454     Document Type: Article

References (16)

1. T. Nishida and N. Kobayashi, Phys. Status Solidi A 176, 45 (1999).
2. T. Nishida, H. Saito, K. Kumakura, T. Makimoto, and N. Kobayashi, IPAP Conf. Ser. 1, 872 (2000).
3. T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 78, 399 (2001).
4. T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 79, 711 (2001).
5. T. Nishida and N. Kobayashi, Phys. Status Solidi A 188, 113 (2001).
6. T. Nishida, T. Ban, and N. Kobayashi, Appl. Phys. Lett. 82, 1 (2003).
7. S. Nagahama, T. Yamamoto, M. Sano, and T. Mukai, Jpn. J. Appl. Phys., Part 2 40, L785,L788 (2001).
8. A. Kinoshita, H. Hirayama, T. Yamabi, A. Hirata, and Y. Aoyagi, Mater. Res. Soc. Symp. Proc. 693, I11.24 (2002).
9. M. Kahn, V. Adivarahan, J. P. Zhang, C. Chen, E. Kuokstis, A. Chitnis, M. Shatalov, J. W. Yang, and G. Simin, Jpn. J. Appl. Phys., Part 2 40, L1308 (2001).
10. M. Iwaya, S. Terao, T. Sano, S. Takanami, T. Ukai, R. Nakamura, S. Kamiyama, H. Amano, and I. Akasaki, Phys. Status Solidi A 188, 117 (2001).
11. T. Nishida, T. Ban, and N. Kobayashi, Appl. Phys. Lett. 82. 3817 (2003).
12. G. A. Slack, J. Phys. Chem. Solids 34, 321 (1973).
13. G. A. Slack and T. McNelly, J. Cryst. Growth 34, 263 (1976)
14. ibid. 42, 560 (1977).
15. L. J. Schowalter, G. A. Slack, J. B. Whitlock, K. Morgan, S. B. Schujman, B. Raghothamachar, M. Dudley, and K. R. Evans, Phys. Status Solidi C 0, 1997 (2003).
16. T. Nishida, T. Ban, and N. Kobayashi, Jpn. J. Appl. Phys., Part 1 42, 2273 (2003).