4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4701-4703

  Yasan, A ^a   McClintock, R ^a   Mayes, K ^a   Shiell, D ^a   Gautero, L ^a   Darvish, S R ^a   Kung, P ^a   Razegh, M ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; OPTICAL POWER; THERMAL MANAGEMENT;

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FLIP CHIP DEVICES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES;

LIGHT EMITTING DIODES;

EID: 0348197114     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633019     Document Type: Article

References (10)

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