Submilliwatt operation of AlInGaN based multifinger-design 315 nm light emitting diode (LED) over sapphire substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 3 B, 2002, Pages

  Chitnis, Ashay ^a   Adivarahan, Vinod ^a   Shatalov, Maxim ^a   Zhang, Jianping ^a   Gaevski, Michael ^a   Shuai, Wu ^a   Pachipulusu, Radhika ^a   Sun, Jason ^a   Simin, Kirill ^a   Simin, Grigory ^a   Yang, Jinwei ^a   Khan, Muhammad Asif ^a  

^a University of South Carolina   (United States)

Author keywords

AlInGaN; Multifinger design; UV LED

Indexed keywords

ANNEALING; ELECTRIC LINES; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

MULTIFINGER DESIGNS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037088528     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l320     Document Type: Article

References (10)