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Volumn 43, Issue 10 A, 2004, Pages

Improvement of crystal quality of AlGaN multi quantum well structure by combination of flow-rate modulation epitaxy and AlN/GaN multi-buffer layer and resultant lasing at deep ultra-violet region

Author keywords

AlGaN MQW laser; Deep UV; Metal organic vapor phase epitaxy; Multi buffer layer; SiC substrate

Indexed keywords

CRYSTALS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EID: 10444270899     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1258     Document Type: Article
Times cited : (23)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.