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Volumn 43, Issue 10 A, 2004, Pages
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Improvement of crystal quality of AlGaN multi quantum well structure by combination of flow-rate modulation epitaxy and AlN/GaN multi-buffer layer and resultant lasing at deep ultra-violet region
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Author keywords
AlGaN MQW laser; Deep UV; Metal organic vapor phase epitaxy; Multi buffer layer; SiC substrate
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Indexed keywords
CRYSTALS;
GALLIUM NITRIDE;
METALLORGANIC VAPOR PHASE EPITAXY;
ORGANIC COMPOUNDS;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR QUANTUM WELLS;
SILICON CARBIDE;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
ALGAN-MQW LASERS;
DEEP-ULTRAVIOLET (UV);
MULTI BUFFER LAYER;
SIC SUBSTRATES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
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EID: 10444270899
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.43.L1258 Document Type: Article |
Times cited : (23)
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References (11)
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