Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Applied Physics Letters

Volumn 80, Issue 19, 2002, Pages 3542-3544

  Zhang, J P ^a   Wang, H M ^a   Gaevski, M E ^a   Chen, C Q ^a   Fareed, Q ^a   Yang, J W ^a   Simin, G ^a   Khan, M Asif ^a  

^a University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN LAYERS; ALINGAN; ALN; BIAXIAL TENSILE STRAIN; C-PLANE SAPPHIRE SUBSTRATES; CRACK FREE; CURRENT CROWDING; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; HIGH QUALITY; SAPPHIRE SUBSTRATES; STRAIN MANAGEMENT; SUPERLATTICE APPROACH;

ALUMINUM; CRACKS; GALLIUM; LIGHT EMITTING DIODES; SAPPHIRE; SUPERLATTICES; ULTRAVIOLET RADIATION;

TENSILE STRAIN;

EID: 79956048052     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1477620     Document Type: Article

References (17)

1. T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 78, 3927 (2001). apl APPLAB 0003-6951
2. A. Kinoshita, H. Hirayama, M. Ainoya, Y. Aoyagi, and A. Hirata, Appl. Phys. Lett. 77, 175 (2000). apl APPLAB 0003-6951
3. N. Otsuka, A. Tsujimura, Y. Hasegawa, G. Sugahara, M. Kume, and Y. Ban, Jpn. J. Appl. Phys., Part 2 39, L445 (2000). jjc JAPLD8 0021-4922
4. V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, G. Simin, M. Asif Khan, M. Shur, and R. Gaska, Appl. Phys. Lett. 79, 4240 (2001). apl APPLAB 0003-6951
5. M. Asif Khan, V. Adivarahan, J. P. Zhang, C. Chen, E. Kuokstis, A. Chitnis, M. Shatalov, J. W. Yang, and G. Simin, Jpn. J. Appl. Phys., Part 2 40, L1308 (2001). jjc JAPLD8 0021-4922
6. J. P. Zhang, V. Adivarahan, H. M. Wang, Q. Fareed, E. Koukstis, A. Chitnis, M. Shatalov, J. W. Yang, G. Simin, M. Asif Khan, M. Shur, and R. Gaska, Jpn. J. Appl. Phys., Part 2 40, L921 (2001). jjc JAPLD8 0021-4922
7. J. P. Zhang, E. Kuokstis, Q. Fareed, H. M. Wang, J. Yang, G. Simin, M. Asif Khan, R. Gaska, and M. Shur, Appl. Phys. Lett. 79, 925 (2001). apl APPLAB 0003-6951
8. H. Amano and I. Akasaki, Opt. Mater. 19, 219 (2001). oma OMATET 0925-3467
9. C.-R. Lee, S.-J. Son, K.-W. Seol, J.-M. Yeo, H.-K. Ahn, and Y.-J. Park, J. Cryst. Growth 226, 215 (2001). jcr JCRGAE 0022-0248
10. M. Shatalov, J. P. Zhang, A. Chitnis, V. Adivarahan, J. W. Yang, G. Simin, and M. Asif Khan, IEEE J. Sel. Top. Quantum Electron. 8 (2002).
11. S. Kamiyama, M. Iwaya, N. Hayashi, T. Takeuchi, H. Amano, I. Akasaki, S. Watanabe, Y. Kaneko, and N. Yamada, J. Cryst. Growth 223, 83 (2001). jcr JCRGAE 0022-0248
12. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel, and I. Akasaki, Phys. Status Solidi B 216, 683 (1999). psb PSSBBD 0370-1972
13. E. Feltin, B. Beaumont, M. Laugt, P. de Mierry, P. Vennegues, H. Lahreche, M. Leroux, and P. Gibart, Appl. Phys. Lett. 79, 3230 (2001). apl APPLAB 0003-6951
14. F. A. Ponce, in Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, edited by S. Nakamura and S. F. Chichibu (Taylor & Francis, London, 2000), Chap. 4, p. 108.
15. X. J. Ning, F. R. Chien, P. Pirouz, J. W. Yang, and M. Asif Khan, J. Mater. Res. 11, 580 (1996). jmr JMREEE 0884-2914
16. A. Krost, J. Blasing, F. Schulze, O. Schon, A. Alam, and M. Heuken, J. Cryst. Growth 221, 251 (2000). jcr JCRGAE 0022-0248
17. L. B. Rowland, K. Doverspike, and D. K. Gaskill, Appl. Phys. Lett. 66, 1495 (1995). apl APPLAB 0003-6951