AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 548-551

  Zhu, Ting Gang ^a   Chowdhury, Uttiya ^a   Denyszyn, Jonathan C ^a   Wong, Michael M ^a   Dupuis, Russell D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

A3. Low press. metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. Heterojunction semiconductor devices; B3. Light emitting diodes

Indexed keywords

HETEROJUNCTIONS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET DEVICES;

EMISSION WAVELENGTH;

LIGHT EMITTING DIODES;

EID: 0037292501     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01930-9     Document Type: Conference Paper

References (8)

1. Wong M.M., Denyszyn J.C., Collins C.J., Chowdhury U., Zhu T.G., Kim K.S., Dupuis R.D. Electron. Lett. 37:2001;1188.
2. Kinoshita A., Hirayama H., Ainoya M., Aoyagi Y., Hirata A. Appl. Phys. Lett. 77:2000;175.
3. Nishida T., Saito H., Kobayashi N. Appl. Phys. Lett. 79:2001;711.
4. Zhu T.G., Denyszyn J.C., Chowdhury U., Wong M.M., Dupuis R.D. IEEE J. Sele. Topic. Quant. Electron. 8:2002;298.
5. Shatalov M., Zhang J., Chitnis A.S., Adivarahan V., Yang J., Simin G., Khan M.A. J. Sele. Topic. Quant. Electron. 8:2002;302.
6. Kipshidze G., Kuryatkov V., Borisov B., Holtz M., Nikishin S., Temkin H. Appl. Phys. Lett. 80:2002;3682.
7. Nishida T., Saito H., Kobayashi N. Appl. Phys. Lett. 78:2001;399.
8. Bremser M.D., Perry W.G., Zheleva T., Edwards N.V., Nam O.H., Parikh N., Aspnes D.E., Davis R.F. MRS Internet J. Nitride Semicond. Res. 1:1996;8.