High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well

Applied Physics Letters

Volumn 84, Issue 7, 2004, Pages 1046-1048

  Mayes, K ^a   Yasan, A ^a   McClintock, R ^a   Shiell, D ^a   Darvish, S R ^a   Kung, P ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXTERNAL QUANTUM EFFICIENCY (EQE); SINGLE-QUANTUM WELLS (SQW);

BONDING; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; GOLD; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; TIN;

LIGHT EMITTING DIODES;

EID: 1542470314     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1647273     Document Type: Article

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